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Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench, and double-trench architectures. The results were used to calculate the failure cross sections and the failure-in-time (FIT) rates at sea level. Enhanced gate and drain leakage...
Autores principales: | , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2021
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1109/tns.2021.3065122 http://cds.cern.ch/record/2772980 |