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Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench, and double-trench architectures. The results were used to calculate the failure cross sections and the failure-in-time (FIT) rates at sea level. Enhanced gate and drain leakage...

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Detalles Bibliográficos
Autores principales:	Martinella, C, Alia, R G, Stark, R, Coronetti, A, Cazzaniga, C, Kastriotou, M, Kadi, Y, Gaillard, R, Grossner, U, Javanainen, A
Lenguaje:	eng
Publicado:	2021
Materias:	Other
Acceso en línea:	https://dx.doi.org/10.1109/tns.2021.3065122 http://cds.cern.ch/record/2772980

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