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Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
The charge-collection efficiency of Si pad diodes irradiated with neutrons up to $8 \times 10^{15} \ \rm{n} \ cm^{-2}$ was measured using a $^{90}$Sr source at temperatures from -180 to -30°C. The measurements were made with diodes under forward and reverse bias. Under reverse bias the diodes were c...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2004
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2004.06.134 http://cds.cern.ch/record/2636086 |