Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias

The charge-collection efficiency of Si pad diodes irradiated with neutrons up to $8 \times 10^{15} \ \rm{n} \ cm^{-2}$ was measured using a $^{90}$Sr source at temperatures from -180 to -30°C. The measurements were made with diodes under forward and reverse bias. Under reverse bias the diodes were c...

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Detalles Bibliográficos
Autores principales: Mandić, I, Cindro, V, Kramberger, G, Mikuž, M, Zavrtanik, M
Lenguaje:eng
Publicado: 2004
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2004.06.134
http://cds.cern.ch/record/2636086
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author Mandić, I
Cindro, V
Kramberger, G
Mikuž, M
Zavrtanik, M
author_facet Mandić, I
Cindro, V
Kramberger, G
Mikuž, M
Zavrtanik, M
author_sort Mandić, I
collection CERN
description The charge-collection efficiency of Si pad diodes irradiated with neutrons up to $8 \times 10^{15} \ \rm{n} \ cm^{-2}$ was measured using a $^{90}$Sr source at temperatures from -180 to -30°C. The measurements were made with diodes under forward and reverse bias. Under reverse bias the diodes were continuously illuminated with light of a short penetration depth, which modified the occupation probability of the defects in the detector bulk. It was found that forward bias gives the highest charge-collection efficiency at any given voltage. Calculations of the charge-collection efficiencies with a simple model using two effective deep defects were compared with measurements.
id oai-inspirehep.net-668635
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
record_format invenio
spelling oai-inspirehep.net-6686352019-09-30T06:29:59Zdoi:10.1016/j.nima.2004.06.134http://cds.cern.ch/record/2636086engMandić, ICindro, VKramberger, GMikuž, MZavrtanik, MCharge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward biasDetectors and Experimental TechniquesThe charge-collection efficiency of Si pad diodes irradiated with neutrons up to $8 \times 10^{15} \ \rm{n} \ cm^{-2}$ was measured using a $^{90}$Sr source at temperatures from -180 to -30°C. The measurements were made with diodes under forward and reverse bias. Under reverse bias the diodes were continuously illuminated with light of a short penetration depth, which modified the occupation probability of the defects in the detector bulk. It was found that forward bias gives the highest charge-collection efficiency at any given voltage. Calculations of the charge-collection efficiencies with a simple model using two effective deep defects were compared with measurements.oai:inspirehep.net:6686352004
spellingShingle Detectors and Experimental Techniques
Mandić, I
Cindro, V
Kramberger, G
Mikuž, M
Zavrtanik, M
Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
title Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
title_full Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
title_fullStr Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
title_full_unstemmed Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
title_short Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
title_sort charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2004.06.134
http://cds.cern.ch/record/2636086
work_keys_str_mv AT mandici chargecollectionefficiencyofheavilyirradiatedsilicondiodesoperatedwithanincreasedfreecarrierconcentrationandunderforwardbias
AT cindrov chargecollectionefficiencyofheavilyirradiatedsilicondiodesoperatedwithanincreasedfreecarrierconcentrationandunderforwardbias
AT krambergerg chargecollectionefficiencyofheavilyirradiatedsilicondiodesoperatedwithanincreasedfreecarrierconcentrationandunderforwardbias
AT mikuzm chargecollectionefficiencyofheavilyirradiatedsilicondiodesoperatedwithanincreasedfreecarrierconcentrationandunderforwardbias
AT zavrtanikm chargecollectionefficiencyofheavilyirradiatedsilicondiodesoperatedwithanincreasedfreecarrierconcentrationandunderforwardbias

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