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Measurement of trapping time constants in proton-irradiated silicon pad detectors
Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between $2 \cdot 10^{13} \ n_{\rm{eq}}/\rm{cm}^2$ and $9 \cdot 10^{14} \ n_{\rm{eq}}/\rm{cm}^2$. The transient current technique was used to measure the trapping probability for holes and ele...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2004
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2004.839096 http://cds.cern.ch/record/2635931 |