Measurement of trapping time constants in proton-irradiated silicon pad detectors

Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between $2 \cdot 10^{13} \ n_{\rm{eq}}/\rm{cm}^2$ and $9 \cdot 10^{14} \ n_{\rm{eq}}/\rm{cm}^2$. The transient current technique was used to measure the trapping probability for holes and ele...

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Detalles Bibliográficos
Autores principales: Krasel, O, Gossling, C, Klingenberg, R, Rajek, S, Wunstorf, R
Lenguaje:eng
Publicado: 2004
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2004.839096
http://cds.cern.ch/record/2635931
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author Krasel, O
Gossling, C
Klingenberg, R
Rajek, S
Wunstorf, R
author_facet Krasel, O
Gossling, C
Klingenberg, R
Rajek, S
Wunstorf, R
author_sort Krasel, O
collection CERN
description Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between $2 \cdot 10^{13} \ n_{\rm{eq}}/\rm{cm}^2$ and $9 \cdot 10^{14} \ n_{\rm{eq}}/\rm{cm}^2$. The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60°C, leads to an increased trapping for holes while electron trapping decreases.
id oai-inspirehep.net-669962
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
record_format invenio
spelling oai-inspirehep.net-6699622019-09-30T06:29:59Zdoi:10.1109/TNS.2004.839096http://cds.cern.ch/record/2635931engKrasel, OGossling, CKlingenberg, RRajek, SWunstorf, RMeasurement of trapping time constants in proton-irradiated silicon pad detectorsDetectors and Experimental TechniquesSilicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between $2 \cdot 10^{13} \ n_{\rm{eq}}/\rm{cm}^2$ and $9 \cdot 10^{14} \ n_{\rm{eq}}/\rm{cm}^2$. The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60°C, leads to an increased trapping for holes while electron trapping decreases.oai:inspirehep.net:6699622004
spellingShingle Detectors and Experimental Techniques
Krasel, O
Gossling, C
Klingenberg, R
Rajek, S
Wunstorf, R
Measurement of trapping time constants in proton-irradiated silicon pad detectors
title Measurement of trapping time constants in proton-irradiated silicon pad detectors
title_full Measurement of trapping time constants in proton-irradiated silicon pad detectors
title_fullStr Measurement of trapping time constants in proton-irradiated silicon pad detectors
title_full_unstemmed Measurement of trapping time constants in proton-irradiated silicon pad detectors
title_short Measurement of trapping time constants in proton-irradiated silicon pad detectors
title_sort measurement of trapping time constants in proton-irradiated silicon pad detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2004.839096
http://cds.cern.ch/record/2635931
work_keys_str_mv AT kraselo measurementoftrappingtimeconstantsinprotonirradiatedsiliconpaddetectors
AT gosslingc measurementoftrappingtimeconstantsinprotonirradiatedsiliconpaddetectors
AT klingenbergr measurementoftrappingtimeconstantsinprotonirradiatedsiliconpaddetectors
AT rajeks measurementoftrappingtimeconstantsinprotonirradiatedsiliconpaddetectors
AT wunstorfr measurementoftrappingtimeconstantsinprotonirradiatedsiliconpaddetectors

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