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Technology development of p-type microstrip detectors with radiation hard p-spray isolation
A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2006
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2006.07.005 http://cds.cern.ch/record/2635129 |