Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy

We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management, simplified growth scheme, improved mater...

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Detalles Bibliográficos
Autores principales: Marchewka, Michał, Jarosz, Dawid, Ruszała, Marta, Juś, Anna, Krzemiński, Piotr, Płoch, Dariusz, Maś, Kinga, Wojnarowska-Nowak, Renata
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10003824/
https://www.ncbi.nlm.nih.gov/pubmed/36903083
http://dx.doi.org/10.3390/ma16051968

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10003824/
https://www.ncbi.nlm.nih.gov/pubmed/36903083
http://dx.doi.org/10.3390/ma16051968

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