Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions

With the ammonothermal method, one of the most promising technologies for scalable, cost-effective production of bulk single crystals of the wide bandgap semiconductor GaN is investigated. Specifically, etch-back and growth conditions, as well as the transition from the former to the latter, are stu...

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Detalles Bibliográficos
Autores principales: Schimmel, Saskia, Tomida, Daisuke, Ishiguro, Tohru, Honda, Yoshio, Chichibu, Shigefusa F., Amano, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004180/
https://www.ncbi.nlm.nih.gov/pubmed/36903128
http://dx.doi.org/10.3390/ma16052016

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004180/
https://www.ncbi.nlm.nih.gov/pubmed/36903128
http://dx.doi.org/10.3390/ma16052016

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