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The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film
Metal modulation epitaxy (MME) is a technique in which metal beams (Al, Ga, In, and Mg) are switched on and off in short periods in an RF MBE system while a continuous nitrogen plasma beam is kept on. We systematically studied the effect of periodic duty cycling on the morphology, crystalline qualit...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004518/ https://www.ncbi.nlm.nih.gov/pubmed/36837358 http://dx.doi.org/10.3390/ma16041730 |
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author | Fang, Jun Yang, Wenxian Zhang, Xue Tian, Aiqin Lu, Shulong Liu, Jianping Yang, Hui |
author_facet | Fang, Jun Yang, Wenxian Zhang, Xue Tian, Aiqin Lu, Shulong Liu, Jianping Yang, Hui |
author_sort | Fang, Jun |
collection | PubMed |
description | Metal modulation epitaxy (MME) is a technique in which metal beams (Al, Ga, In, and Mg) are switched on and off in short periods in an RF MBE system while a continuous nitrogen plasma beam is kept on. We systematically studied the effect of periodic duty cycling on the morphology, crystalline quality, Mg doping concentration, and electrical properties of GaN:Mg films grown by MME. When the metal shutter duty cycling is 20 s open/10 s close, the sample has smooth surface with clear steps even with Mg doping concentration higher than 1 × 10(20) cm(−3). The RMS roughness is about 0.5 nm. The FWHM of (002) XRD rocking curve is 230 arcsec and the FWHM of (102) XRD rocking curve is 260 arcsec. As result, a hole concentration of 5 × 10(18) cm(−3) and a resistivity of 1.5 Ω·cm have been obtained. The hole concentration increases due to the incorporation of surface accumulated Mg dopants into suitable Ga substitutional sites with minimal formation of compensatory defects. |
format | Online Article Text |
id | pubmed-10004518 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-100045182023-03-11 The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film Fang, Jun Yang, Wenxian Zhang, Xue Tian, Aiqin Lu, Shulong Liu, Jianping Yang, Hui Materials (Basel) Article Metal modulation epitaxy (MME) is a technique in which metal beams (Al, Ga, In, and Mg) are switched on and off in short periods in an RF MBE system while a continuous nitrogen plasma beam is kept on. We systematically studied the effect of periodic duty cycling on the morphology, crystalline quality, Mg doping concentration, and electrical properties of GaN:Mg films grown by MME. When the metal shutter duty cycling is 20 s open/10 s close, the sample has smooth surface with clear steps even with Mg doping concentration higher than 1 × 10(20) cm(−3). The RMS roughness is about 0.5 nm. The FWHM of (002) XRD rocking curve is 230 arcsec and the FWHM of (102) XRD rocking curve is 260 arcsec. As result, a hole concentration of 5 × 10(18) cm(−3) and a resistivity of 1.5 Ω·cm have been obtained. The hole concentration increases due to the incorporation of surface accumulated Mg dopants into suitable Ga substitutional sites with minimal formation of compensatory defects. MDPI 2023-02-20 /pmc/articles/PMC10004518/ /pubmed/36837358 http://dx.doi.org/10.3390/ma16041730 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Fang, Jun Yang, Wenxian Zhang, Xue Tian, Aiqin Lu, Shulong Liu, Jianping Yang, Hui The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film |
title | The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film |
title_full | The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film |
title_fullStr | The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film |
title_full_unstemmed | The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film |
title_short | The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film |
title_sort | effect of periodic duty cyclings in metal-modulated epitaxy on gan:mg film |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004518/ https://www.ncbi.nlm.nih.gov/pubmed/36837358 http://dx.doi.org/10.3390/ma16041730 |
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