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In Situ Synchrotron XRD Characterization of Piezoelectric Al(1−x)Sc(x)N Thin Films for MEMS Applications

Aluminum scandium nitride (Al(1−x)Sc(x)N) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coeffi...

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Autores principales: Jiang, Wenzheng, Zhu, Lei, Chen, Lingli, Yang, Yumeng, Yu, Xi, Li, Xiaolong, Mu, Zhiqiang, Yu, Wenjie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004546/
https://www.ncbi.nlm.nih.gov/pubmed/36902897
http://dx.doi.org/10.3390/ma16051781
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author Jiang, Wenzheng
Zhu, Lei
Chen, Lingli
Yang, Yumeng
Yu, Xi
Li, Xiaolong
Mu, Zhiqiang
Yu, Wenjie
author_facet Jiang, Wenzheng
Zhu, Lei
Chen, Lingli
Yang, Yumeng
Yu, Xi
Li, Xiaolong
Mu, Zhiqiang
Yu, Wenjie
author_sort Jiang, Wenzheng
collection PubMed
description Aluminum scandium nitride (Al(1−x)Sc(x)N) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coefficient, which is also crucial for MEMS device design. In this study, we proposed an in situ method based on a synchrotron X-ray diffraction (XRD) system to characterize the longitudinal piezoelectric constant d(33) of Al(1−x)Sc(x)N film. The measurement results quantitatively demonstrated the piezoelectric effect of Al(1−x)Sc(x)N films by lattice spacing variation upon applied external voltage. The as-extracted d(33) had a reasonable accuracy compared with the conventional high over-tone bulk acoustic resonators (HBAR) devices and Berlincourt methods. It was also found that the substrate clamping effect, leading to underestimation of d(33) from in situ synchrotron XRD measurement while overestimation using Berlincourt method, should be thoroughly corrected in the data extraction process. The d(33) of AlN and Al(0.9)Sc(0.1)N obtained by synchronous XRD method were 4.76 pC/N and 7.79 pC/N, respectively, matching well with traditional HBAR and Berlincourt methods. Our findings prove the in situ synchrotron XRD measurement as an effective method for precise piezoelectric coefficient d(33) characterization.
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spelling pubmed-100045462023-03-11 In Situ Synchrotron XRD Characterization of Piezoelectric Al(1−x)Sc(x)N Thin Films for MEMS Applications Jiang, Wenzheng Zhu, Lei Chen, Lingli Yang, Yumeng Yu, Xi Li, Xiaolong Mu, Zhiqiang Yu, Wenjie Materials (Basel) Article Aluminum scandium nitride (Al(1−x)Sc(x)N) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coefficient, which is also crucial for MEMS device design. In this study, we proposed an in situ method based on a synchrotron X-ray diffraction (XRD) system to characterize the longitudinal piezoelectric constant d(33) of Al(1−x)Sc(x)N film. The measurement results quantitatively demonstrated the piezoelectric effect of Al(1−x)Sc(x)N films by lattice spacing variation upon applied external voltage. The as-extracted d(33) had a reasonable accuracy compared with the conventional high over-tone bulk acoustic resonators (HBAR) devices and Berlincourt methods. It was also found that the substrate clamping effect, leading to underestimation of d(33) from in situ synchrotron XRD measurement while overestimation using Berlincourt method, should be thoroughly corrected in the data extraction process. The d(33) of AlN and Al(0.9)Sc(0.1)N obtained by synchronous XRD method were 4.76 pC/N and 7.79 pC/N, respectively, matching well with traditional HBAR and Berlincourt methods. Our findings prove the in situ synchrotron XRD measurement as an effective method for precise piezoelectric coefficient d(33) characterization. MDPI 2023-02-21 /pmc/articles/PMC10004546/ /pubmed/36902897 http://dx.doi.org/10.3390/ma16051781 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Jiang, Wenzheng
Zhu, Lei
Chen, Lingli
Yang, Yumeng
Yu, Xi
Li, Xiaolong
Mu, Zhiqiang
Yu, Wenjie
In Situ Synchrotron XRD Characterization of Piezoelectric Al(1−x)Sc(x)N Thin Films for MEMS Applications
title In Situ Synchrotron XRD Characterization of Piezoelectric Al(1−x)Sc(x)N Thin Films for MEMS Applications
title_full In Situ Synchrotron XRD Characterization of Piezoelectric Al(1−x)Sc(x)N Thin Films for MEMS Applications
title_fullStr In Situ Synchrotron XRD Characterization of Piezoelectric Al(1−x)Sc(x)N Thin Films for MEMS Applications
title_full_unstemmed In Situ Synchrotron XRD Characterization of Piezoelectric Al(1−x)Sc(x)N Thin Films for MEMS Applications
title_short In Situ Synchrotron XRD Characterization of Piezoelectric Al(1−x)Sc(x)N Thin Films for MEMS Applications
title_sort in situ synchrotron xrd characterization of piezoelectric al(1−x)sc(x)n thin films for mems applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004546/
https://www.ncbi.nlm.nih.gov/pubmed/36902897
http://dx.doi.org/10.3390/ma16051781
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