Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and non-uniform size distribution. To overcome these challenges, forming QDs using photoelectrochemical (PEC) etching with coherent light has been devel...

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Detalles Bibliográficos
Autores principales: Wei, Xiongliang, Al Muyeed, Syed Ahmed, Xue, Haotian, Wierer, Jonathan J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004632/
https://www.ncbi.nlm.nih.gov/pubmed/36903004
http://dx.doi.org/10.3390/ma16051890

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004632/
https://www.ncbi.nlm.nih.gov/pubmed/36903004
http://dx.doi.org/10.3390/ma16051890

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