Cargando…

Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and non-uniform size distribution. To overcome these challenges, forming QDs using photoelectrochemical (PEC) etching with coherent light has been devel...

Descripción completa

Detalles Bibliográficos
Autores principales:	Wei, Xiongliang, Al Muyeed, Syed Ahmed, Xue, Haotian, Wierer, Jonathan J.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004632/ https://www.ncbi.nlm.nih.gov/pubmed/36903004 http://dx.doi.org/10.3390/ma16051890

Ejemplares similares

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots
por: Heyn, Christian, et al.
Publicado: (2022)

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
por: Gibasiewicz, Krzysztof, et al.
Publicado: (2023)

Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature
por: Ranasinghe, Leonardo, et al.
Publicado: (2021)

Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array
por: Wang, Qi, et al.
Publicado: (2021)

Modified top-down approach for synthesis of molybdenum oxide quantum dots: sonication induced chemical etching of thin films
por: Borah, Dibya Jyoti, et al.
Publicado: (2020)

Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching
por: Horng, Ray-Hua, et al.
Publicado: (2021)

Fabrication of porous gallium nitride by photoelectrochemical etching method
por: Cheah, Sook Fong, et al.
Publicado: (2017)

InGaN as a Substrate for AC Photoelectrochemical Imaging
por: Zhou, Bo, et al.
Publicado: (2019)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
por: Li, Hongjian, et al.
Publicado: (2016)

Level Set Approach to Anisotropic Wet Etching of Silicon
por: Radjenović, Branislav, et al.
Publicado: (2010)

Anisotropic etching of platinum electrodes at the onset of cathodic corrosion
por: Hersbach, Thomas J. P., et al.
Publicado: (2016)

Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells
por: Santiago, Svette Reina Merden, et al.
Publicado: (2018)

Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits
por: Grydlik, Martyna, et al.
Publicado: (2012)

Laser processing of thin films and microstructures: oxidation, deposition and etching of insulators
por: Boyd, Ian W
Publicado: (1987)

Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
por: Hüpkes, Jürgen, et al.
Publicado: (2012)

HF etched glass substrates for improved thin-film solar cells
por: Park, Hyeongsik, et al.
Publicado: (2018)

Correction: Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells
por: Merden Santiago, Svette Reina, et al.
Publicado: (2018)

Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer
por: Abdur-Rahman, Eyad, et al.
Publicado: (2017)

Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs
por: Bioud, Youcef A., et al.
Publicado: (2016)

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis
por: Alvi, Naveed ul Hassan, et al.
Publicado: (2013)

Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs
por: Barettin, Daniele, et al.
Publicado: (2023)

Resculpting carbon dots via electrochemical etching
por: Yang, Qingsong, et al.
Publicado: (2023)

Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry
por: Dijken, Jaron G. Van, et al.
Publicado: (2012)

Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution
por: Shifat, A. S. M. Zadid, et al.
Publicado: (2023)

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
por: Itoh, Takeki, et al.
Publicado: (2016)

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure
por: Yu, Jiadong, et al.
Publicado: (2016)

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching
por: Chen, Lung-Chien, et al.
Publicado: (2017)

Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates
por: Wei, Da, et al.
Publicado: (2013)

Extreme wettability of nanostructured glass fabricated by non-lithographic, anisotropic etching
por: Yu, Eusun, et al.
Publicado: (2015)

A confined-etching strategy for intrinsic anisotropic surface wetting patterning
por: Feng, Rui, et al.
Publicado: (2022)

Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching
por: Asoh, Hidetaka, et al.
Publicado: (2012)

Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching
por: Gil-Santos, Eduardo, et al.
Publicado: (2017)

Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures
por: Um, Dae-Young, et al.
Publicado: (2021)

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films
por: Ashok, Akarapu, et al.
Publicado: (2014)

A statistical method to optimize the chemical etching process of zinc oxide thin films
por: Lynes, David D., et al.
Publicado: (2022)

Etched and non etched test Rutherford cable.
por: S. Horvath
Publicado: (2000)

Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)
por: Sombrio, Guilherme, et al.
Publicado: (2021)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Copper-Ion-Assisted Precipitation Etching Method for the Luminescent Enhanced Assembling of Sulfur Quantum Dots
por: Li, Qi-Le, et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_vritcf9nkpnvlq8j26aqla1bij