A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs

This study proposed a novel source/drain (S/D) extension scheme to increase the stress in nanosheet (NS) field-effect transistors (NSFETs) and investigated the scheme by using technology-computer-aided-design simulations. In three-dimensional integrated circuits, transistors in the bottom tier were...

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Detalles Bibliográficos
Autores principales: Lee, Sanguk, Jeong, Jinsu, Kang, Bohyeon, Lee, Seunghwan, Lee, Junjong, Lim, Jaewan, Hwang, Hyeonjun, Ahn, Sungmin, Baek, Rockhyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004793/
https://www.ncbi.nlm.nih.gov/pubmed/36903745
http://dx.doi.org/10.3390/nano13050868

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004793/
https://www.ncbi.nlm.nih.gov/pubmed/36903745
http://dx.doi.org/10.3390/nano13050868

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