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A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs
This study proposed a novel source/drain (S/D) extension scheme to increase the stress in nanosheet (NS) field-effect transistors (NSFETs) and investigated the scheme by using technology-computer-aided-design simulations. In three-dimensional integrated circuits, transistors in the bottom tier were...
Autores principales: | Lee, Sanguk, Jeong, Jinsu, Kang, Bohyeon, Lee, Seunghwan, Lee, Junjong, Lim, Jaewan, Hwang, Hyeonjun, Ahn, Sungmin, Baek, Rockhyun |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10004793/ https://www.ncbi.nlm.nih.gov/pubmed/36903745 http://dx.doi.org/10.3390/nano13050868 |
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