Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor

Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femto...

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Detalles Bibliográficos
Autores principales: Yu, Yongchao, Joshi, Pooran, Bridges, Denzel, Fieser, David, Hu, Anming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005240/
https://www.ncbi.nlm.nih.gov/pubmed/36903667
http://dx.doi.org/10.3390/nano13050789

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005240/
https://www.ncbi.nlm.nih.gov/pubmed/36903667
http://dx.doi.org/10.3390/nano13050789

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