Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Hf(0.5)Zr(0.5)O(2) (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process. This study examined the physical and electrical properties of HZ...

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Detalles Bibliográficos
Autores principales: Hong, Da Hee, Yoo, Jae Hoon, Park, Won Ji, Kim, So Won, Kim, Jong Hwan, Uhm, Sae Hoon, Lee, Hee Chul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005305/
https://www.ncbi.nlm.nih.gov/pubmed/36903776
http://dx.doi.org/10.3390/nano13050900

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005305/
https://www.ncbi.nlm.nih.gov/pubmed/36903776
http://dx.doi.org/10.3390/nano13050900

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