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Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory
Hf(0.5)Zr(0.5)O(2) (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process. This study examined the physical and electrical properties of HZ...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005305/ https://www.ncbi.nlm.nih.gov/pubmed/36903776 http://dx.doi.org/10.3390/nano13050900 |
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author | Hong, Da Hee Yoo, Jae Hoon Park, Won Ji Kim, So Won Kim, Jong Hwan Uhm, Sae Hoon Lee, Hee Chul |
author_facet | Hong, Da Hee Yoo, Jae Hoon Park, Won Ji Kim, So Won Kim, Jong Hwan Uhm, Sae Hoon Lee, Hee Chul |
author_sort | Hong, Da Hee |
collection | PubMed |
description | Hf(0.5)Zr(0.5)O(2) (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process. This study examined the physical and electrical properties of HZO thin films deposited by two plasma-enhanced atomic layer deposition (PEALD) methods— direct plasma atomic layer deposition (DPALD) and remote plasma atomic layer deposition (RPALD)—and the effects of plasma application on the properties of HZO thin films. The initial conditions for HZO thin film deposition, depending on the RPALD deposition temperature, were established based on previous research on HZO thin films deposited by the DPALD method. The results show that as the measurement temperature increases, the electric properties of DPALD HZO quickly deteriorate; however, the RPALD HZO thin film exhibited excellent fatigue endurance at a measurement temperature of 60 °C or less. HZO thin films deposited by the DPALD and RPALD methods exhibited relatively good remanent polarization and fatigue endurance, respectively. These results confirm the applicability of the HZO thin films deposited by the RPALD method as ferroelectric memory devices. |
format | Online Article Text |
id | pubmed-10005305 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-100053052023-03-11 Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory Hong, Da Hee Yoo, Jae Hoon Park, Won Ji Kim, So Won Kim, Jong Hwan Uhm, Sae Hoon Lee, Hee Chul Nanomaterials (Basel) Article Hf(0.5)Zr(0.5)O(2) (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process. This study examined the physical and electrical properties of HZO thin films deposited by two plasma-enhanced atomic layer deposition (PEALD) methods— direct plasma atomic layer deposition (DPALD) and remote plasma atomic layer deposition (RPALD)—and the effects of plasma application on the properties of HZO thin films. The initial conditions for HZO thin film deposition, depending on the RPALD deposition temperature, were established based on previous research on HZO thin films deposited by the DPALD method. The results show that as the measurement temperature increases, the electric properties of DPALD HZO quickly deteriorate; however, the RPALD HZO thin film exhibited excellent fatigue endurance at a measurement temperature of 60 °C or less. HZO thin films deposited by the DPALD and RPALD methods exhibited relatively good remanent polarization and fatigue endurance, respectively. These results confirm the applicability of the HZO thin films deposited by the RPALD method as ferroelectric memory devices. MDPI 2023-02-27 /pmc/articles/PMC10005305/ /pubmed/36903776 http://dx.doi.org/10.3390/nano13050900 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Hong, Da Hee Yoo, Jae Hoon Park, Won Ji Kim, So Won Kim, Jong Hwan Uhm, Sae Hoon Lee, Hee Chul Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory |
title | Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory |
title_full | Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory |
title_fullStr | Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory |
title_full_unstemmed | Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory |
title_short | Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory |
title_sort | characteristics of hf(0.5)zr(0.5)o(2) thin films prepared by direct and remote plasma atomic layer deposition for application to ferroelectric memory |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005305/ https://www.ncbi.nlm.nih.gov/pubmed/36903776 http://dx.doi.org/10.3390/nano13050900 |
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