Cargando…
Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory
Hf(0.5)Zr(0.5)O(2) (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process. This study examined the physical and electrical properties of HZ...
Autores principales: | Hong, Da Hee, Yoo, Jae Hoon, Park, Won Ji, Kim, So Won, Kim, Jong Hwan, Uhm, Sae Hoon, Lee, Hee Chul |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005305/ https://www.ncbi.nlm.nih.gov/pubmed/36903776 http://dx.doi.org/10.3390/nano13050900 |
Ejemplares similares
-
Interface-engineered ferroelectricity of epitaxial Hf(0.5)Zr(0.5)O(2) thin films
por: Shi, Shu, et al.
Publicado: (2023) -
Improved Ferroelectric Properties in Hf(0.5)Zr(0.5)O(2) Thin Films by Microwave Annealing
por: Zhao, Biyao, et al.
Publicado: (2022) -
Effect of Process Temperature on Density and Electrical Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
por: Kim, Hak-Gyeong, et al.
Publicado: (2022) -
Inductive crystallization effect of atomic-layer-deposited Hf(0.5)Zr(0.5)O(2) films for ferroelectric application
por: Zhang, Xun, et al.
Publicado: (2015) -
A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf(0.5)Zr(0.5)O(2) Thin Films
por: Kim, Si Joon, et al.
Publicado: (2020)