Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin III-Sb layers as quantum wells or in superlattices are well known. However, these alloys suffer from severe surface segregation problems, so that the actual profiles are very different from the nominal on...

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Detalles Bibliográficos
Autores principales: Gonzalez, David, Flores, Sara, Braza, Verónica, Reyes, Daniel F., Carro, Alejandro Gallego, Stanojević, Lazar, Schwarz, Malte, Ulloa, Jose María, Ben, Teresa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005751/
https://www.ncbi.nlm.nih.gov/pubmed/36903684
http://dx.doi.org/10.3390/nano13050798

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10005751/
https://www.ncbi.nlm.nih.gov/pubmed/36903684
http://dx.doi.org/10.3390/nano13050798

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