Surface Acoustic Wave Propagation of GaN/Sapphire Integrated with a Gold Guiding Layer

Gallium nitride (GaN), widely known as a wide bandgap semiconductor material, has been mostly employed in high power devices, light emitting diodes (LED), and optoelectronic applications. However, it could be exploited differently due to its piezoelectric properties, such as its higher SAW velocity...

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Detalles Bibliográficos
Autores principales: Jaafar, Muhammad Musoddiq, Mohd Razip Wee, Mohd Farhanulhakim, Nguyen, Hoang-Tan-Ngoc, Hieu, Le Trung, Rai, Rahul, Sahoo, Ashish Kumar, Dee, Chang Fu, Chang, Edward Yi, Yeop Majlis, Burhanuddin, Tee, Clarence Augustine TH
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10007255/
https://www.ncbi.nlm.nih.gov/pubmed/36904668
http://dx.doi.org/10.3390/s23052464

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10007255/
https://www.ncbi.nlm.nih.gov/pubmed/36904668
http://dx.doi.org/10.3390/s23052464

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