Cargando…

Surface Acoustic Wave Propagation of GaN/Sapphire Integrated with a Gold Guiding Layer

Gallium nitride (GaN), widely known as a wide bandgap semiconductor material, has been mostly employed in high power devices, light emitting diodes (LED), and optoelectronic applications. However, it could be exploited differently due to its piezoelectric properties, such as its higher SAW velocity...

Descripción completa

Detalles Bibliográficos
Autores principales:	Jaafar, Muhammad Musoddiq, Mohd Razip Wee, Mohd Farhanulhakim, Nguyen, Hoang-Tan-Ngoc, Hieu, Le Trung, Rai, Rahul, Sahoo, Ashish Kumar, Dee, Chang Fu, Chang, Edward Yi, Yeop Majlis, Burhanuddin, Tee, Clarence Augustine TH
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10007255/ https://www.ncbi.nlm.nih.gov/pubmed/36904668 http://dx.doi.org/10.3390/s23052464

Ejemplares similares

A Theoretical Study of Surface Mode Propagation with a Guiding Layer of GaN/Sapphire Hetero-Structure in Liquid Medium
por: Mohd Razip Wee, M. F., et al.
Publicado: (2018)

Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation
por: Tuan Yaakub, Tuan Norjihan, et al.
Publicado: (2018)

Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer
por: Ooi, Poh Choon, et al.
Publicado: (2019)

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In(0.53)Ga(0.47)As MOSFET
por: Mohd Razip Wee, Mohd F., et al.
Publicado: (2013)

Label Free Glucose Electrochemical Biosensor Based on Poly(3,4-ethylenedioxy thiophene):Polystyrene Sulfonate/Titanium Carbide/Graphene Quantum Dots
por: Nashruddin, Siti Nur AshakirinMohd, et al.
Publicado: (2021)

Ultraviolet Light-Assisted Copper Oxide Nanowires Hydrogen Gas Sensor
por: Sihar, Nabihah, et al.
Publicado: (2018)

Exploiting the Oxygen Inhibitory Effect on UV Curing in Microfabrication: A Modified Lithography Technique
por: Alvankarian, Jafar, et al.
Publicado: (2015)

Tunable Microfluidic Devices for Hydrodynamic Fractionation of Cells and Beads: A Review
por: Alvankarian, Jafar, et al.
Publicado: (2015)

A Review of MEMS Capacitive Microphones
por: Zawawi, Siti Aisyah, et al.
Publicado: (2020)

The Fabrication and Indentation of Cubic Silicon Carbide Diaphragm for Acoustic Sensing
por: Zawawi, Siti Aisyah, et al.
Publicado: (2021)

Developing Conductive Highly Ordered Zinc Oxide Nanorods by Acetylacetonate-Assisted Growth
por: A Karim, Siti Shafura, et al.
Publicado: (2020)

The Design, Fabrication, and Testing of an Electromagnetic Micropump with a Matrix-Patterned Magnetic Polymer Composite Actuator Membrane
por: Mohd Said, Muzalifah, et al.
Publicado: (2017)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022)

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
por: Lin, Meng-Hung, et al.
Publicado: (2010)

Antibacterial-Integrated Collagen Wound Dressing for Diabetes-Related Foot Ulcers: An Evidence-Based Review of Clinical Studies
por: N. Amirrah, Ibrahim, et al.
Publicado: (2020)

Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches
por: Zulkefli, Mohd Amir, et al.
Publicado: (2017)

A Tapered Aluminium Microelectrode Array for Improvement of Dielectrophoresis-Based Particle Manipulation
por: Buyong, Muhamad Ramdzan, et al.
Publicado: (2015)

Silicon-Based Scaffold for Wound Healing Skin Regeneration Applications: A Concise Review
por: Zulkiflee, Izzat, et al.
Publicado: (2022)

Hierarchical Si/ZnO trunk-branch nanostructure for photocurrent enhancement
por: Dee, Chang Fu, et al.
Publicado: (2014)

Role of Boron in Assisting the Super-Enhancement of Emissions from Carbon-Implanted Silicon
por: Abdul Razak, Nurul Ellena, et al.
Publicado: (2023)

Sputtered Encapsulation as Wafer Level Packaging for Isolatable MEMS Devices: A Technique Demonstrated on a Capacitive Accelerometer
por: Hamzah, Azrul Azlan, et al.
Publicado: (2008)

Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition
por: Shazni Mohammad Haniff, Muhammad Aniq, et al.
Publicado: (2021)

Effect of Geometric Parameters on the Performance of P-Type Junctionless Lateral Gate Transistors
por: Larki, Farhad, et al.
Publicado: (2014)

Fabrication of Suspended PMMA-Graphene Membrane for High Sensitivity LC-MEMS Pressure Sensor
por: Yusof, Norliana, et al.
Publicado: (2021)

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces
por: Rothman, Amnon, et al.
Publicado: (2021)

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
por: Su, Zhaole, et al.
Publicado: (2022)

Dielectrophoresis Manipulation: Versatile Lateral and Vertical Mechanisms
por: Buyong, Muhamad Ramdzan, et al.
Publicado: (2019)

Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
por: Jiu, L., et al.
Publicado: (2018)

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
por: Tsykaniuk, Bogdan I., et al.
Publicado: (2017)

Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
por: Wu, Jinxing, et al.
Publicado: (2020)

Facile Au-assisted epitaxy of nearly strain-free GaN films on sapphire substrates
por: Li, Pengkun, et al.
Publicado: (2020)

Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes
por: Chao, Szu-Han, et al.
Publicado: (2020)

Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy
por: Li, Heng, et al.
Publicado: (2017)

The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates
por: Jue, Miyeon, et al.
Publicado: (2015)

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
por: Tsykaniuk, Bogdan I., et al.
Publicado: (2017)

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers
por: Gao, Yuan, et al.
Publicado: (2020)

Experimental dataset of nanoporous GaN photoelectrode supported on patterned sapphire substrates for photoelectrochemical water splitting
por: Li, Dongjing, et al.
Publicado: (2019)

Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate
por: Ahn, Min-joo, et al.
Publicado: (2023)

Large-Area MoS(2) Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition
por: Španková, Marianna, et al.
Publicado: (2023)

Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
por: Wu, YewChung Sermon, et al.
Publicado: (2015)

Cannot write session to /tmp/vufind_sessions/sess_ohb1u2vmjs2akpkrnie2hdf6sr