Reducing charge noise in quantum dots by using thin silicon quantum wells

Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the...

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Detalles Bibliográficos
Autores principales: Paquelet Wuetz, Brian, Degli Esposti, Davide, Zwerver, Anne-Marije J., Amitonov, Sergey V., Botifoll, Marc, Arbiol, Jordi, Sammak, Amir, Vandersypen, Lieven M. K., Russ, Maximilian, Scappucci, Giordano
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10011559/
https://www.ncbi.nlm.nih.gov/pubmed/36914637
http://dx.doi.org/10.1038/s41467-023-36951-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10011559/
https://www.ncbi.nlm.nih.gov/pubmed/36914637
http://dx.doi.org/10.1038/s41467-023-36951-w

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