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Surface modifications by wet oxidation method removing getter layer in crystalline silicon cells

Reducing the impurity atom content in crystalline silicon (c-Si) can effectively reduce the recombination current density (J(0)) and improve the photoelectric conversion efficiency (PCE) of solar cells. Phosphorus diffusion gettering (PDG) has been proven to be an effective method to remove impurity...

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Detalles Bibliográficos
Autores principales: Zhang, Geng, Ji, Genhua, Bao, Jie, Chen, Cheng, Sim, Seunghwan, Du, Zheren
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10011970/
https://www.ncbi.nlm.nih.gov/pubmed/36926011
http://dx.doi.org/10.1039/d2ra07682a