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Surface modifications by wet oxidation method removing getter layer in crystalline silicon cells
Reducing the impurity atom content in crystalline silicon (c-Si) can effectively reduce the recombination current density (J(0)) and improve the photoelectric conversion efficiency (PCE) of solar cells. Phosphorus diffusion gettering (PDG) has been proven to be an effective method to remove impurity...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10011970/ https://www.ncbi.nlm.nih.gov/pubmed/36926011 http://dx.doi.org/10.1039/d2ra07682a |