Wafer-scale integration of GaAs/AlGaAs core–shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy

GaAs/AlGaAs core–shell nanowires, typically having 250 nm diameter and 6 μm length, were grown on 2-inch Si wafers by the single process of molecular beam epitaxy using constituent Ga-induced self-catalysed vapor–liquid–solid growth. The growth was carried out without specific pre-treatment such as...

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Detalles Bibliográficos
Autores principales: Minehisa, Keisuke, Murakami, Ryo, Hashimoto, Hidetoshi, Nakama, Kaito, Sakaguchi, Kenta, Tsutsumi, Rikuo, Tanigawa, Takeru, Yukimune, Mitsuki, Nagashima, Kazuki, Yanagida, Takeshi, Sato, Shino, Hiura, Satoshi, Murayama, Akihiro, Ishikawa, Fumitaro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10012865/
https://www.ncbi.nlm.nih.gov/pubmed/36926567
http://dx.doi.org/10.1039/d2na00848c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10012865/
https://www.ncbi.nlm.nih.gov/pubmed/36926567
http://dx.doi.org/10.1039/d2na00848c

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