Pristine GaFeO(3) Photoanodes with Surface Charge Transfer Efficiency of Almost Unity at 1.23 V for Photoelectrochemical Water Splitting

Oxide‐based photoelectrodes commonly generate deep trap states associated with various intrinsic defects such as vacancies, antisites, and dislocations, limiting their photoelectrochemical properties. Herein, it is reported that rhombohedral GaFeO(3) (GFO) thin‐film photoanodes exhibit defect‐inacti...

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Detalles Bibliográficos
Autores principales: Sun, Xin, Wang, Min, Li, Hai‐Fang, Meng, Linxing, Lv, Xiao‐Jun, Li, Liang, Li, Meicheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10015867/
https://www.ncbi.nlm.nih.gov/pubmed/36658721
http://dx.doi.org/10.1002/advs.202205907

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10015867/
https://www.ncbi.nlm.nih.gov/pubmed/36658721
http://dx.doi.org/10.1002/advs.202205907

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