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Pristine GaFeO(3) Photoanodes with Surface Charge Transfer Efficiency of Almost Unity at 1.23 V for Photoelectrochemical Water Splitting
Oxide‐based photoelectrodes commonly generate deep trap states associated with various intrinsic defects such as vacancies, antisites, and dislocations, limiting their photoelectrochemical properties. Herein, it is reported that rhombohedral GaFeO(3) (GFO) thin‐film photoanodes exhibit defect‐inacti...
Autores principales: | Sun, Xin, Wang, Min, Li, Hai‐Fang, Meng, Linxing, Lv, Xiao‐Jun, Li, Liang, Li, Meicheng |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10015867/ https://www.ncbi.nlm.nih.gov/pubmed/36658721 http://dx.doi.org/10.1002/advs.202205907 |
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