Selective area doping for Mott neuromorphic electronics

The cointegration of artificial neuronal and synaptic devices with homotypic materials and structures can greatly simplify the fabrication of neuromorphic hardware. We demonstrate experimental realization of vanadium dioxide (VO(2)) artificial neurons and synapses on the same substrate through selec...

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Detalles Bibliográficos
Autores principales: Deng, Sunbin, Yu, Haoming, Park, Tae Joon, Islam, A. N. M. Nafiul, Manna, Sukriti, Pofelski, Alexandre, Wang, Qi, Zhu, Yimei, Sankaranarayanan, Subramanian K. R. S., Sengupta, Abhronil, Ramanathan, Shriram
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2023
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10022892/
https://www.ncbi.nlm.nih.gov/pubmed/36930716
http://dx.doi.org/10.1126/sciadv.ade4838

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10022892/
https://www.ncbi.nlm.nih.gov/pubmed/36930716
http://dx.doi.org/10.1126/sciadv.ade4838

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