Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene

Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps that are separated by wider minibands. While the resulting spectrum offers strong potential for use in functional (opto)electronic devices, a p...

Descripción completa

Detalles Bibliográficos
Autores principales: Nathawat, Jubin, Mansaray, Ishiaka, Sakanashi, Kohei, Wada, Naoto, Randle, Michael D., Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Barut, Bilal, Zhao, Miao, Ramamoorthy, Harihara, Somphonsane, Ratchanok, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Aoki, Nobuyuki, Han, Jong E., Bird, Jonathan P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10023744/
https://www.ncbi.nlm.nih.gov/pubmed/36932096
http://dx.doi.org/10.1038/s41467-023-37292-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10023744/
https://www.ncbi.nlm.nih.gov/pubmed/36932096
http://dx.doi.org/10.1038/s41467-023-37292-4

Ejemplares similares