Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation

GeSn compounds have made many interesting contributions in photodetectors (PDs) over the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn incorporation in Ge alters the cut off wavelength. In the present article, p–i–n structures based on GeSn junctions were fabricated...

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Detalles Bibliográficos
Autores principales: Nawwar, Mohamed A., Abo Ghazala, Magdy S., Sharaf El-Deen, Lobna M., Anis, Badawi, El-Shaer, Abdelhamid, Elseman, Ahmed Mourtada, Rashad, Mohamed M., Kashyout, Abd El-hady B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10025945/
https://www.ncbi.nlm.nih.gov/pubmed/36950705
http://dx.doi.org/10.1039/d3ra00805c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10025945/
https://www.ncbi.nlm.nih.gov/pubmed/36950705
http://dx.doi.org/10.1039/d3ra00805c

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