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Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
GeSn compounds have made many interesting contributions in photodetectors (PDs) over the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn incorporation in Ge alters the cut off wavelength. In the present article, p–i–n structures based on GeSn junctions were fabricated...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10025945/ https://www.ncbi.nlm.nih.gov/pubmed/36950705 http://dx.doi.org/10.1039/d3ra00805c |