Heterogeneous Integration of Atomically‐Thin Indium Tungsten Oxide Transistors for Low‐Power 3D Monolithic Complementary Inverter

In this work, the authors demonstrate a novel vertically‐stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p‐channel polycrystalline silicon (poly‐Si) and n‐channel amorphous indium tungsten oxide (a‐IWO), with a low footprint than p...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Zhen‐Hao, Chiang, Tsung‐Che, Kuo, Po‐Yi, Tu, Chun‐Hao, Kuo, Yue, Liu, Po‐Tsun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10037976/
https://www.ncbi.nlm.nih.gov/pubmed/36658711
http://dx.doi.org/10.1002/advs.202205481

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10037976/
https://www.ncbi.nlm.nih.gov/pubmed/36658711
http://dx.doi.org/10.1002/advs.202205481

Ejemplares similares