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Heterogeneous Integration of Atomically‐Thin Indium Tungsten Oxide Transistors for Low‐Power 3D Monolithic Complementary Inverter

In this work, the authors demonstrate a novel vertically‐stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p‐channel polycrystalline silicon (poly‐Si) and n‐channel amorphous indium tungsten oxide (a‐IWO), with a low footprint than p...

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Detalles Bibliográficos
Autores principales:	Li, Zhen‐Hao, Chiang, Tsung‐Che, Kuo, Po‐Yi, Tu, Chun‐Hao, Kuo, Yue, Liu, Po‐Tsun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2023
Materias:	Research Articles
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10037976/ https://www.ncbi.nlm.nih.gov/pubmed/36658711 http://dx.doi.org/10.1002/advs.202205481

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