Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Correction for ‘Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates’ by Florian Pantle et al., Nanoscale Adv., 2021, 3, 3835–3845, https://doi.org/10.1039/D1NA00221J.

Detalles Bibliográficos
Autores principales: Pantle, Florian, Becker, Fabian, Kraut, Max, Wörle, Simon, Hoffmann, Theresa, Artmeier, Sabrina, Stutzmann, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10044745/
https://www.ncbi.nlm.nih.gov/pubmed/36998650
http://dx.doi.org/10.1039/d3na90031b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10044745/
https://www.ncbi.nlm.nih.gov/pubmed/36998650
http://dx.doi.org/10.1039/d3na90031b

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