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Bonding of PMMA to silicon by femtosecond laser pulses

Many devices and objects, from microelectronics to microfluidics, consist of parts made from dissimilar materials, such as different polymers, metals or semiconductors. Techniques for joining such hybrid micro-devices, generally, are based on gluing or thermal processes, which all present some drawb...

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Detalles Bibliográficos
Autores principales: Capodacqua, Filippo Maria Conte, Volpe, Annalisa, Gaudiuso, Caterina, Ancona, Antonio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10049991/
https://www.ncbi.nlm.nih.gov/pubmed/36977765
http://dx.doi.org/10.1038/s41598-023-31969-y
Descripción
Sumario:Many devices and objects, from microelectronics to microfluidics, consist of parts made from dissimilar materials, such as different polymers, metals or semiconductors. Techniques for joining such hybrid micro-devices, generally, are based on gluing or thermal processes, which all present some drawbacks. For example, these methods are unable to control the size and shape of the bonded area, and present risks of deterioration and contamination of the substrates. Ultrashort laser bonding is a non-contact and flexible technique to precisely join similar and dissimilar materials, used both for joining polymers, and polymers to metallic substrates, but not yet for joining polymers to silicon. We report on direct transmission femtosecond laser bonding of poly(methyl methacrylate) (PMMA) and silicon. The laser process was performed by focusing ultrashort laser pulses at high repetition rate at the interface between the two materials through the PMMA upper layer. The PMMA-Si bond strength was evaluated as a function of different laser processing parameters. A simple, analytical, model was set up and used to determine the temperature of the PMMA during the bonding process. As a proof of concept, the femtosecond-laser bonding of a simple hybrid PMMA-Si microfluidic device has been successfully demonstrated through dynamic leakage tests.