Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method

The ongoing trend towards miniaturization and increased packaging density has exacerbated the reliability problem of Au-Al heterogeneous metal bonding structures in high-temperature environments, where extreme temperatures and high current pose a serious challenge. In order to address this issue, the present study aims to investigate the electromigration reliability of Au-Al bonding by comparing the conventional heterogeneous contacts with OPM structures, which are homogeneous contacts. A novel bonding layout was developed to precisely detect the resistance and obtain stage changes in electromigration. The experimental results demonstrated that the relative resistance shift of Au-Al bonding at 250 °C was 98.7%, while CrAu and NiPdAu OPM structures exhibited only 46.1% and 2.93% shifts, which suggests that the reliability of OPM structures was improved by a factor of 2.14 and 33.6, respectively. The degradation of Au-Al bonding was attributed to the large cracks observed at the bonding interface and lateral consumption of Al elements. In contrast, OPM structures only exhibited tiny voids and maintained a better bonding state overall, indicating that homogeneous metal contacts have better immunity to electromigration. Furthermore, this study also observed the polarity effect of electromigration and analyzed the impact of NiPdAu thickness on reliability. Overall, this research provides a novel approach and an insightful theoretical reference for addressing the bottleneck of high-temperature electromigration reliability in high-temperature sensor packaging.