Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning

In this study, the device characteristics of silicon nanowire feedback field-effect transistors were predicted using technology computer-aided design (TCAD)-augmented machine learning (TCAD-ML). The full current–voltage (I-V) curves in forward and reverse voltage sweeps were predicted well, with hig...

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Detalles Bibliográficos
Autores principales: Woo, Sola, Jeon, Juhee, Kim, Sangsig
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051704/
https://www.ncbi.nlm.nih.gov/pubmed/36984910
http://dx.doi.org/10.3390/mi14030504

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051704/
https://www.ncbi.nlm.nih.gov/pubmed/36984910
http://dx.doi.org/10.3390/mi14030504

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