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Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning
In this study, the device characteristics of silicon nanowire feedback field-effect transistors were predicted using technology computer-aided design (TCAD)-augmented machine learning (TCAD-ML). The full current–voltage (I-V) curves in forward and reverse voltage sweeps were predicted well, with hig...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051704/ https://www.ncbi.nlm.nih.gov/pubmed/36984910 http://dx.doi.org/10.3390/mi14030504 |