Ion-Induced Lateral Damage in the Focused Ion Beam Patterning of Topological Insulator Bi(2)Se(3) Thin Films

Focused Ion Beam patterning has become a widely applied technique in the last few decades in the micro- and nanofabrication of quantum materials, representing an important advantage in terms of resolution and versatility. However, ion irradiation can trigger undesired effects on the target material,...

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Detalles Bibliográficos
Autores principales: Gracia-Abad, Rubén, Sangiao, Soraya, Kumar Chaluvadi, Sandeep, Orgiani, Pasquale, Teresa, José María De
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051711/
https://www.ncbi.nlm.nih.gov/pubmed/36984129
http://dx.doi.org/10.3390/ma16062244

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051711/
https://www.ncbi.nlm.nih.gov/pubmed/36984129
http://dx.doi.org/10.3390/ma16062244

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