Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO(2) Multilayer Structure for Neuromorphic Systems

In this work, we report the digital and analog resistive-switching (RS) characteristics in a memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal-oxide-semiconductor (MOS) structure. Si-NCs with a diameter of 5.48 ± 1.24 nm embedded in a SiO(2)/Si-NCs/SiO(2) multila...

Descripción completa

Detalles Bibliográficos
Autores principales: Morales-Sánchez, Alfredo, González-Flores, Karla Esther, Pérez-García, Sergio Alfonso, González-Torres, Sergio, Garrido-Fernández, Blas, Hernández-Martínez, Luis, Moreno-Moreno, Mario
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10052137/
https://www.ncbi.nlm.nih.gov/pubmed/36985880
http://dx.doi.org/10.3390/nano13060986

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10052137/
https://www.ncbi.nlm.nih.gov/pubmed/36985880
http://dx.doi.org/10.3390/nano13060986

Ejemplares similares