Raman Characterization of the In-Plane Stress Tensor of Gallium Nitride

Experimental characterization of the in-plane stress tensor is a basic requirement for the development of GaN strain engineering. In this work, a theoretical model of stress characterization for GaN using polarized micro-Raman spectroscopy was developed based on elasticity theory and lattice dynamic...

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Detalles Bibliográficos
Autores principales: Han, Bowen, Sun, Mingyuan, Chang, Ying, He, Saisai, Zhao, Yuqi, Qu, Chuanyong, Qiu, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10052785/
https://www.ncbi.nlm.nih.gov/pubmed/36984135
http://dx.doi.org/10.3390/ma16062255

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10052785/
https://www.ncbi.nlm.nih.gov/pubmed/36984135
http://dx.doi.org/10.3390/ma16062255

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