Cargando…
Raman Characterization of the In-Plane Stress Tensor of Gallium Nitride
Experimental characterization of the in-plane stress tensor is a basic requirement for the development of GaN strain engineering. In this work, a theoretical model of stress characterization for GaN using polarized micro-Raman spectroscopy was developed based on elasticity theory and lattice dynamic...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10052785/ https://www.ncbi.nlm.nih.gov/pubmed/36984135 http://dx.doi.org/10.3390/ma16062255 |