Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate

This study provides experimental evidence regarding the mechanism of gallium nitride (GaN) selective-area growth (SAG) on a polished plateau-patterned sapphire substrate (PP-PSS), on which aluminum nitride (AlN) buffer layers are deposited under the same deposition conditions. The SAG of GaN was onl...

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Detalles Bibliográficos
Autores principales: Ahn, Min-joo, Jeong, Woo-seop, Shim, Kyu-yeon, Kang, Seongho, Kim, Hwayoung, Kim, Dae-sik, Jhin, Junggeun, Kim, Jaekyun, Byun, Dongjin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10053046/
https://www.ncbi.nlm.nih.gov/pubmed/36984342
http://dx.doi.org/10.3390/ma16062462

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10053046/
https://www.ncbi.nlm.nih.gov/pubmed/36984342
http://dx.doi.org/10.3390/ma16062462

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