Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping c...

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Detalles Bibliográficos
Autores principales: Raship, Nur Amaliyana, Tawil, Siti Nooraya Mohd, Nayan, Nafarizal, Ismail, Khadijah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10053668/
https://www.ncbi.nlm.nih.gov/pubmed/36984272
http://dx.doi.org/10.3390/ma16062392

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10053668/
https://www.ncbi.nlm.nih.gov/pubmed/36984272
http://dx.doi.org/10.3390/ma16062392

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