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Design and Analysis of Lithium–Niobate-Based Laterally Excited Bulk Acoustic Wave Resonator with Pentagon Spiral Electrodes

In this paper, we present a comprehensive study on the propagation and dispersion characteristics of A(1) mode propagating in Z-cut LiNbO(3) membrane. The A(1) mode resonators with pentagon spiral electrodes utilizing Z-cut lithium niobate (LiNbO(3)) thin film are designed and fabricated. The propos...

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Detalles Bibliográficos
Autores principales: Xie, Ying, Liu, Wenjuan, Cai, Yao, Wen, Zhiwei, Luo, Tiancheng, Liu, Yan, Sun, Chengliang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10053681/
https://www.ncbi.nlm.nih.gov/pubmed/36984959
http://dx.doi.org/10.3390/mi14030552
Descripción
Sumario:In this paper, we present a comprehensive study on the propagation and dispersion characteristics of A(1) mode propagating in Z-cut LiNbO(3) membrane. The A(1) mode resonators with pentagon spiral electrodes utilizing Z-cut lithium niobate (LiNbO(3)) thin film are designed and fabricated. The proposed structure excites the A(1) mode waves in both x- and y-direction by utilizing both the piezoelectric constants e(24) and e(15) due to applying voltage along both the x- and y-direction by arranging pentagon spiral electrode. The fabricated resonator operates at 5.43 GHz with no spurious mode and effective electromechanical coupling coefficient ([Formula: see text]) of 21.3%, when the width of electrode is 1 µm and the pitch is 5 µm. Moreover, we present a comprehensive study of the effect of different structure parameters on resonance frequency and [Formula: see text] of XBAR. The [Formula: see text] keeps a constant with varied thickness of LiNbO(3) thin film and different electrode rotation angles, while it declines with the increase of p from 5 to 20 µm. The proposed XBAR with pentagon spiral electrodes realize high frequency response with no spurious mode and tunable [Formula: see text] , which shows promising prospects to satisfy the needs of various 5 G high-band application.