Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

Single-event gate-rupture (SEGR) in the trench vertical double-diffused power MOSFET (VDMOS) occurs at a critical bias voltage during heavy-ion experiments. Fault analysis demonstrates that the hot spot is located at the termination of the VDMOS, and the gate oxide in the termination region has been...

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Detalles Bibliográficos
Autores principales: Wang, Yuan, Liu, Tao, Qian, Lingli, Wu, Hao, Yu, Yiren, Tao, Jingyu, Cheng, Zijun, Hu, Shengdong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10053811/
https://www.ncbi.nlm.nih.gov/pubmed/36985094
http://dx.doi.org/10.3390/mi14030688

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10053811/
https://www.ncbi.nlm.nih.gov/pubmed/36985094
http://dx.doi.org/10.3390/mi14030688

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