Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test

Due to material plastic deformation and current leakage at high temperatures, SOI (silicon-on-insulator) and SOS (silicon-on-sapphire) pressure sensors have difficulty working over 500 °C. Silicon carbide (SiC) is a promising sensor material to solve this problem because of its stable mechanical and...

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Detalles Bibliográficos
Autores principales: Zhao, You, Zhao, Yulong, Wang, Lukang, Yang, Yu, Wang, Yabing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10054109/
https://www.ncbi.nlm.nih.gov/pubmed/36984993
http://dx.doi.org/10.3390/mi14030587

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10054109/
https://www.ncbi.nlm.nih.gov/pubmed/36984993
http://dx.doi.org/10.3390/mi14030587

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