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Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test
Due to material plastic deformation and current leakage at high temperatures, SOI (silicon-on-insulator) and SOS (silicon-on-sapphire) pressure sensors have difficulty working over 500 °C. Silicon carbide (SiC) is a promising sensor material to solve this problem because of its stable mechanical and...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10054109/ https://www.ncbi.nlm.nih.gov/pubmed/36984993 http://dx.doi.org/10.3390/mi14030587 |