Mg Doping of N-Polar, In-Rich InAlN

Metal organic chemical vapor deposition was used to grow N-polar In(0.63)Al(0.37)N on sapphire substrates. P-doping was provided by a precursor flow of Cp(2)Mg between 0 and 130 nmol/min, reaching a Cp(2)Mg/III ratio of 8.3 × 10(−3). The grain structure of 360 nm thick InAlN was spoiled by pits afte...

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Detalles Bibliográficos
Autores principales: Kuzmík, Ján, Pohorelec, Ondrej, Hasenöhrl, Stanislav, Blaho, Michal, Stoklas, Roman, Dobročka, Edmund, Rosová, Alica, Kučera, Michal, Gucmann, Filip, Gregušová, Dagmar, Precner, Marian, Vincze, Andrej
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056125/
https://www.ncbi.nlm.nih.gov/pubmed/36984128
http://dx.doi.org/10.3390/ma16062250

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056125/
https://www.ncbi.nlm.nih.gov/pubmed/36984128
http://dx.doi.org/10.3390/ma16062250

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