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Mg Doping of N-Polar, In-Rich InAlN

Metal organic chemical vapor deposition was used to grow N-polar In(0.63)Al(0.37)N on sapphire substrates. P-doping was provided by a precursor flow of Cp(2)Mg between 0 and 130 nmol/min, reaching a Cp(2)Mg/III ratio of 8.3 × 10(−3). The grain structure of 360 nm thick InAlN was spoiled by pits afte...

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Autores principales: Kuzmík, Ján, Pohorelec, Ondrej, Hasenöhrl, Stanislav, Blaho, Michal, Stoklas, Roman, Dobročka, Edmund, Rosová, Alica, Kučera, Michal, Gucmann, Filip, Gregušová, Dagmar, Precner, Marian, Vincze, Andrej
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056125/
https://www.ncbi.nlm.nih.gov/pubmed/36984128
http://dx.doi.org/10.3390/ma16062250
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author Kuzmík, Ján
Pohorelec, Ondrej
Hasenöhrl, Stanislav
Blaho, Michal
Stoklas, Roman
Dobročka, Edmund
Rosová, Alica
Kučera, Michal
Gucmann, Filip
Gregušová, Dagmar
Precner, Marian
Vincze, Andrej
author_facet Kuzmík, Ján
Pohorelec, Ondrej
Hasenöhrl, Stanislav
Blaho, Michal
Stoklas, Roman
Dobročka, Edmund
Rosová, Alica
Kučera, Michal
Gucmann, Filip
Gregušová, Dagmar
Precner, Marian
Vincze, Andrej
author_sort Kuzmík, Ján
collection PubMed
description Metal organic chemical vapor deposition was used to grow N-polar In(0.63)Al(0.37)N on sapphire substrates. P-doping was provided by a precursor flow of Cp(2)Mg between 0 and 130 nmol/min, reaching a Cp(2)Mg/III ratio of 8.3 × 10(−3). The grain structure of 360 nm thick InAlN was spoiled by pits after introducing a flow of CP(2)Mg at 30 nmol/min. The surface quality was improved with a flow of 80 nmol/min; however, detrimental deterioration appeared at 130 nmol/min. This correlated with the XRD shape and determined density of dislocations, indicating a phase separation at the highest flow. Degenerated n-type conduction and a free carrier concentration of ~10(19) cm(−3) were determined in all samples, with a minor compensation observed at a CP(2)Mg flow of 30 nmol/min. The room temperature (RT) electron mobility of ~40 cm(2)/Vs of the undoped sample was reduced to ~6 and ~0.3 cm(2)/Vs with a CP(2)Mg flow of 30 and 80 nmol/min, respectively. Scattering at ionized acceptor/donor Mg-related levels is suggested. RT photoluminescence showed a red shift of 0.22 eV from the virgin 1.73 eV peak value with Mg doping. Mobility degradation was found to be the main factor by InAlN resistivity determination, which increased by two orders of magnitude, approaching ~0.5 Ωcm, at the highest Cp(2)Mg flow.
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spelling pubmed-100561252023-03-30 Mg Doping of N-Polar, In-Rich InAlN Kuzmík, Ján Pohorelec, Ondrej Hasenöhrl, Stanislav Blaho, Michal Stoklas, Roman Dobročka, Edmund Rosová, Alica Kučera, Michal Gucmann, Filip Gregušová, Dagmar Precner, Marian Vincze, Andrej Materials (Basel) Article Metal organic chemical vapor deposition was used to grow N-polar In(0.63)Al(0.37)N on sapphire substrates. P-doping was provided by a precursor flow of Cp(2)Mg between 0 and 130 nmol/min, reaching a Cp(2)Mg/III ratio of 8.3 × 10(−3). The grain structure of 360 nm thick InAlN was spoiled by pits after introducing a flow of CP(2)Mg at 30 nmol/min. The surface quality was improved with a flow of 80 nmol/min; however, detrimental deterioration appeared at 130 nmol/min. This correlated with the XRD shape and determined density of dislocations, indicating a phase separation at the highest flow. Degenerated n-type conduction and a free carrier concentration of ~10(19) cm(−3) were determined in all samples, with a minor compensation observed at a CP(2)Mg flow of 30 nmol/min. The room temperature (RT) electron mobility of ~40 cm(2)/Vs of the undoped sample was reduced to ~6 and ~0.3 cm(2)/Vs with a CP(2)Mg flow of 30 and 80 nmol/min, respectively. Scattering at ionized acceptor/donor Mg-related levels is suggested. RT photoluminescence showed a red shift of 0.22 eV from the virgin 1.73 eV peak value with Mg doping. Mobility degradation was found to be the main factor by InAlN resistivity determination, which increased by two orders of magnitude, approaching ~0.5 Ωcm, at the highest Cp(2)Mg flow. MDPI 2023-03-10 /pmc/articles/PMC10056125/ /pubmed/36984128 http://dx.doi.org/10.3390/ma16062250 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Kuzmík, Ján
Pohorelec, Ondrej
Hasenöhrl, Stanislav
Blaho, Michal
Stoklas, Roman
Dobročka, Edmund
Rosová, Alica
Kučera, Michal
Gucmann, Filip
Gregušová, Dagmar
Precner, Marian
Vincze, Andrej
Mg Doping of N-Polar, In-Rich InAlN
title Mg Doping of N-Polar, In-Rich InAlN
title_full Mg Doping of N-Polar, In-Rich InAlN
title_fullStr Mg Doping of N-Polar, In-Rich InAlN
title_full_unstemmed Mg Doping of N-Polar, In-Rich InAlN
title_short Mg Doping of N-Polar, In-Rich InAlN
title_sort mg doping of n-polar, in-rich inaln
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056125/
https://www.ncbi.nlm.nih.gov/pubmed/36984128
http://dx.doi.org/10.3390/ma16062250
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